Vishay SiR870BDP Type N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK SIR870BDP-T1-UE3
- RS-stocknr.:
- 653-199
- Fabrikantnummer:
- SIR870BDP-T1-UE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 3.789,00
(excl. BTW)
€ 4.584,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,263 | € 3.789,00 |
*prijsindicatie
- RS-stocknr.:
- 653-199
- Fabrikantnummer:
- SIR870BDP-T1-UE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SiR870BDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0061Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.61mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SiR870BDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0061Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.61mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.
Pb Free
Halogen free
RoHS compliant
Gerelateerde Links
- Vishay SiR870BDP Type N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK
- Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3
- Vishay SISS176LDN Type N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8
- Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK SIRA12DDP-T1-GE3
- Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5607DP Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin PowerPAK SIR5607DP-T1-UE3