Vishay SISS176LDN Type N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3
- RS-stocknr.:
- 653-099
- Fabrikantnummer:
- SISS176LDN-T1-UE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.218,00
(excl. BTW)
€ 1.473,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,406 | € 1.218,00 |
*prijsindicatie
- RS-stocknr.:
- 653-099
- Fabrikantnummer:
- SISS176LDN-T1-UE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | SISS176LDN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.30 mm | |
| Height | 0.41mm | |
| Standards/Approvals | No | |
| Length | 3.30mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series SISS176LDN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 3.30 mm | ||
Height 0.41mm | ||
Standards/Approvals No | ||
Length 3.30mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 70 V drain-source voltage and 42.3 A continuous drain current. It features a Compact PowerPAK 1212-8S surface-mount package, making it Ideal for DC/DC converters, synchronous rectification, motor control, and load switching.
Pb Free
Halogen free
RoHS compliant
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