Infineon IMZC120 N-Channel MOSFET, 34 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R040M2HXKSA1

RS-stocknr.:: 351-930
Fabrikantnummer:: IMZC120R040M2HXKSA1
Fabrikant:: Infineon

Infineon IMZC120 N-Channel MOSFET, 34 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R040M2HXKSA1

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RS-stocknr.:: 351-930
Fabrikantnummer:: IMZC120R040M2HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	PG-TO-247-4-U07
	Series	IMZC120
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	39nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	218W
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type PG-TO-247-4-U07
	Series IMZC120
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 39nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 218W
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IMZC120R040M2HXKSA1

Infineon IMZC120 Series MOSFET, 218W Maximum Power Dissipation, 1200V Maximum Drain Source Voltage - IMZC120R040M2HXKSA1

This n-channel enhancement-mode MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It is intended for through-hole mounting in equipment that requires robust drain-to-source blocking capability and substantial continuous current handling, operating across a wide thermal range suitable for harsh conditions.

Features and Benefits:

• 1200V drain-source rating enables high-voltage designs
• 34A continuous drain current supports heavy-load operation
• 40mΩ low Rds(on) reduces conduction losses
• 218W power dissipation for high-power switching
• 39nC typical gate charge allows controlled switching energy
• Through-hole PG-TO-247-4 package simplifies prototype assembly

Applications

• Suitable for high-voltage power supplies and converters
• Used with motor drives requiring large current capacity
• Ideal for industrial inverter and switch-mode tasks
• Can be used for battery-charging systems in heavy equipment
• Used for laboratory power-electronics testing and development

What ambient extremes can this device tolerate during operation?

It is specified to operate from -55°C up to 175°C, allowing use in environments with severe temperature variation.

What package and mounting style does it require on a PCB?

The device is supplied in a PG-TO-247-4 through-hole package intended for bolted or soldered mounting with appropriate heatsinking.

How does the gate drive requirement affect switching design?

With a typical gate charge of 39nC at rated Vgs, designers should size gate drivers and gate resistances to balance switching speed and EMI while considering drive current.

What electrical limits must be observed to prevent device damage?

Maximum gate-source voltage is 25V and drain-source voltage is 1200V

these absolute values must not be exceeded during operation.