Infineon IMZC120 N-Channel MOSFET, 69 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R017M2HXKSA1
- RS-stocknr.:
- 351-924
- Fabrikantnummer:
- IMZC120R017M2HXKSA1
- Fabrikant:
- Infineon
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- Verzending vanaf 07 december 2027
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| 1 - 9 | € 19,93 |
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*prijsindicatie
- RS-stocknr.:
- 351-924
- Fabrikantnummer:
- IMZC120R017M2HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | IMZC120 | |
| Package Type | PG-TO-247-4-U07 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 5.5V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 382W | |
| Maximum Operating Temperature | 200°C | |
| Width | 16mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 23.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series IMZC120 | ||
Package Type PG-TO-247-4-U07 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 5.5V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 382W | ||
Maximum Operating Temperature 200°C | ||
Width 16mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 23.5mm | ||
Automotive Standard No | ||
Infineon IMZC120 Series MOSFET, 1200V Drain Source Voltage, 69A Continuous Drain Current - IMZC120R017M2HXKSA1
This high-voltage N-channel enhancement MOSFET is designed for power switching in demanding electronic systems. It operates across an extended temperature range and is suitable for through-hole board assembly, offering robust high-voltage handling and substantial continuous current capability for industrial and power-conversion contexts.
Features and Benefits:
• 1200V drain-source rating enables high-voltage switching applications
• 69A continuous drain current supports heavy-load operation
• 45mΩ RDS(on) reduces conduction losses during operation
• 382W maximum dissipation allows high-power handling
• 89nC typical gate charge optimises switching performance
• VGS limit of 25V ensures gate drive compatibility and protection
• 69A continuous drain current supports heavy-load operation
• 45mΩ RDS(on) reduces conduction losses during operation
• 382W maximum dissipation allows high-power handling
• 89nC typical gate charge optimises switching performance
• VGS limit of 25V ensures gate drive compatibility and protection
Applications
• Suitable for high-voltage inverter and converter stages
• Ideal for industrial motor-drive power stages
• Used with mains-side power supplies requiring high dissipation
• Can be used for switch-mode power supply primary switching
• Useful in renewable-energy inverter and storage systems
• Ideal for industrial motor-drive power stages
• Used with mains-side power supplies requiring high dissipation
• Can be used for switch-mode power supply primary switching
• Useful in renewable-energy inverter and storage systems
What package facilitates mounting and heat removal?
The component is supplied in a four-pin PG-TO-247-4-U07 through-hole package that simplifies PCB mounting and allows reliable attachment to heatsinks for thermal management.
How does it perform across temperature extremes?
It is specified to function from -55°C up to 200°C, enabling use in environments with wide thermal variation and elevated junction temperatures.
What drive considerations apply for gate control?
The typical gate charge of 89nC requires a gate driver capable of sourcing and sinking sufficient current for intended switching speeds while respecting the 25V maximum gate-source rating.
Are there recognised manufacturing or testing standards referenced?
The device aligns with JEDEC47/20/22 standards for related qualification and testing approaches used in component assessment.
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