Infineon IMZC120 N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

RS-stocknr.:: 351-928
Fabrikantnummer:: IMZC120R034M2HXKSA1
Fabrikant:: Infineon

Infineon IMZC120 N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

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RS-stocknr.:: 351-928
Fabrikantnummer:: IMZC120R034M2HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	PG-TO-247-4-U07
	Series	IMZC120
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	89mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Power Dissipation Pd	244W
	Maximum Gate Source Voltage Vgs	25V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	200°C
	Width	15.6mm
	Standards/Approvals	JEDEC47/20/22
	Length	23.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type PG-TO-247-4-U07
	Series IMZC120
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 89mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Power Dissipation Pd 244W
	Maximum Gate Source Voltage Vgs 25V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 200°C
	Width 15.6mm
	Standards/Approvals JEDEC47/20/22
	Length 23.1mm
	Automotive Standard No

Datasheet - IMZC120R034M2HXKSA1

Infineon IMZC120 Series MOSFET, 244W Maximum Power Dissipation, 1200V Maximum Drain Source Voltage - IMZC120R034M2HXKSA1

This MOSFET is a high-voltage switching transistor intended for power conversion and control in demanding industrial environments. It is an enhancement-mode N-channel device designed to handle elevated drain-source voltages and substantial continuous current, making it suitable for roles where robust high-voltage switching and thermal endurance are required.

Features and Benefits:

• 1200V Vds enables high-voltage system utilisation
• 55A continuous drain current supports heavy-load switching
• 89mΩ Rds(on) lowers conduction losses during operation
• 244W power dissipation allows sustained thermal throughput
• 45nC typical gate charge improves switching speed control

Applications

• Suitable for high-voltage inverter stages in industrial drives
• Ideal for power supplies requiring high-voltage switching
• Used with large motor controllers demanding high current handling
• Can be used for hard-switching topologies in converters

What package and mounting style does it use for assembly?

It is supplied in a PG-TO-247-4-U07 package configured for through-hole mounting to facilitate secure board attachment and robust thermal connection to heatsinks.

What temperature range can it tolerate during operation?

It operates across a wide span from -55°C up to 200°C, permitting use in extreme thermal conditions and elevated junction temperatures.

How many pins are present and what does this imply electrically?

The device has four pins, accommodating gate, drain and dual-source or tab arrangements typical of power MOSFET packages for flexible circuit integration.

Which industry standard tests apply to its qualification?

It conforms to JEDEC47/20/22 standards, indicating compliance with established thermal and mechanical reliability test protocols.