Renesas Electronics RJH60D6DPK-00#T0 IGBT, 80 A 600 V, 3-Pin TO-3P, Through Hole
- RS-stocknr.:
- 772-6588P
- Fabrikantnummer:
- RJH60D6DPK-00#T0
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal 20 eenheden (geleverd in een zak)*
€ 85,20
(excl. BTW)
€ 103,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk |
|---|---|
| 20 - 69 | € 4,26 |
| 70 - 249 | € 3,66 |
| 250 - 499 | € 3,15 |
| 500 + | € 2,84 |
*prijsindicatie
- RS-stocknr.:
- 772-6588P
- Fabrikantnummer:
- RJH60D6DPK-00#T0
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 260 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.6 x 4.8 x 14.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 260 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.6 x 4.8 x 14.9mm | ||
Maximum Operating Temperature +150 °C | ||
- Land van herkomst:
- JP
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.