Infineon IKB06N60TATMA1, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-263, Through Hole
- RS-stocknr.:
- 273-2966
- Fabrikantnummer:
- IKB06N60TATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 544,00
(excl. BTW)
€ 658,00
(incl. BTW)
Voeg 1000 eenheden toe voor gratis bezorging
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- Verzending vanaf 13 juli 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 0,544 | € 544,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2966
- Fabrikantnummer:
- IKB06N60TATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 12A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.31 mm | |
| Length | 9.45mm | |
| Height | 4.57mm | |
| Series | TrenchStop | |
| Standards/Approvals | Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 12A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.31 mm | ||
Length 9.45mm | ||
Height 4.57mm | ||
Series TrenchStop | ||
Standards/Approvals Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022 | ||
Automotive Standard No | ||
The Infineon IGBT3 compacted with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of
High ruggedness and temperature stable behaviour
Very tight parameter distribution
High device reliability
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