Toshiba GT50J342,Q(O IGBT, 80 A 600 V, 3-Pin TO-3P, Through Hole
- RS-stocknr.:
- 891-2740
- Fabrikantnummer:
- GT50J342,Q(O
- Fabrikant:
- Toshiba
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 891-2740
- Fabrikantnummer:
- GT50J342,Q(O
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 394 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 0.38µs | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Energy Rating | 1.7mJ | |
| Maximum Operating Temperature | 175 °C | |
| Gate Capacitance | 4800pF | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 394 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 0.38µs | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Energy Rating 1.7mJ | ||
Maximum Operating Temperature 175 °C | ||
Gate Capacitance 4800pF | ||
- Land van herkomst:
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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