Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A, Through Hole
- RS-stocknr.:
- 124-3701
- Fabrikantnummer:
- RJH60F3DPQ-A0#T0
- Fabrikant:
- Renesas Electronics
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 124-3701
- Fabrikantnummer:
- RJH60F3DPQ-A0#T0
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 178.5 W | |
| Package Type | TO-247A | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.94 x 5.02 x 21.13mm | |
| Gate Capacitance | 1260pF | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 178.5 W | ||
Package Type TO-247A | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.94 x 5.02 x 21.13mm | ||
Gate Capacitance 1260pF | ||
Maximum Operating Temperature +150 °C | ||
- Land van herkomst:
- JP
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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