onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
- RS-stocknr.:
- 145-4338
- Fabrikantnummer:
- FGAF40N60UFTU
- Fabrikant:
- onsemi
Subtotaal (1 tube van 30 eenheden)*
€ 36,66
(excl. BTW)
€ 44,37
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 660 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 1,222 | € 36,66 |
*prijsindicatie
- RS-stocknr.:
- 145-4338
- Fabrikantnummer:
- FGAF40N60UFTU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 100 W | |
| Package Type | TO-3PF | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 5.5 x 26.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 100 W | ||
Package Type TO-3PF | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 5.5 x 26.5mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
- Land van herkomst:
- CN
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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