STMicroelectronics, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 168-7004
- Fabrikantnummer:
- STGW40V60DF
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 73,50
(excl. BTW)
€ 88,80
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 2,45 | € 73,50 |
| 60 - 120 | € 2,388 | € 71,64 |
| 150 + | € 2,327 | € 69,81 |
*prijsindicatie
- RS-stocknr.:
- 168-7004
- Fabrikantnummer:
- STGW40V60DF
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 283W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Series | V | |
| Length | 15.75mm | |
| Standards/Approvals | Lead free package | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 283W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature 175°C | ||
Series V | ||
Length 15.75mm | ||
Standards/Approvals Lead free package | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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