STMicroelectronics, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 877-2905P
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 10 eenheden (geleverd in een buis)*
€ 55,06
(excl. BTW)
€ 66,62
(incl. BTW)
Voeg 15 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 355 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 - 95 | € 5,506 |
| 100 - 495 | € 4,404 |
| 500 - 995 | € 3,92 |
| 1000 + | € 3,31 |
*prijsindicatie
- RS-stocknr.:
- 877-2905P
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 200W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 29ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.7V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | Rugged | |
| Height | 20.15mm | |
| Standards/Approvals | JEDEC Standard JESD97 | |
| Automotive Standard | No | |
| Energy Rating | 1435mJ | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 200W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 29ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series Rugged | ||
Height 20.15mm | ||
Standards/Approvals JEDEC Standard JESD97 | ||
Automotive Standard No | ||
Energy Rating 1435mJ | ||
- Land van herkomst:
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW20NC60VD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole