IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2474 Producten voor IGBTs

    IXYS
    64 A
    1200 V
    ±20V
    480 W
    -
    -
    TO-247
    Through Hole
    N
    3
    50kHz
    Single
    16.26 x 5.3 x 21.46mm
    ROHM
    20 A
    460 V
    ±10.0V
    107 W
    -
    -
    TO-263L
    Surface Mount
    -
    3
    -
    -
    -
    onsemi
    30 A
    1200 V
    -
    357 W
    6
    3 Phase
    SPM27-CA
    Through Hole
    N
    27
    -
    -
    -
    Infineon
    900 A
    1200 V
    20V
    20 mW
    -
    Dual
    AG-ECONOD
    -
    N
    -
    -
    Common Emitter
    -
    IXYS
    20 A
    1200 V
    ±20V
    85 W
    -
    -
    TO-220
    Through Hole
    N
    3
    -
    Single
    10.66 x 4.82 x 16mm
    Infineon
    750 A
    1200 V
    20V
    20 mW
    2
    Dual
    AG-ECONOD
    Chassis Mount
    -
    -
    -
    Series
    -
    STMicroelectronics
    145 A
    650 V
    ±20V
    441 W
    1
    -
    TO-247
    -
    -
    3
    -
    Single
    -
    Vishay
    476 A
    650 V
    ± 20V
    1 kW
    2
    Half Bridge
    INT-A-PAK
    Panel Mount
    N
    7
    -
    -
    -
    Infineon
    100 A
    600 V
    +/-20V
    275 W
    4
    Emitter-Collector, Quad (2 x Dual)
    -
    -
    -
    -
    -
    -
    -
    Infineon
    8 A
    1200 V
    ±20V
    106 W
    1
    Single
    TO-247-3
    Through Hole
    N
    3
    -
    Single
    -
    ROHM
    57 A
    650 V
    ±30V
    165 W
    -
    -
    TO-263L
    Surface Mount
    -
    3
    -
    -
    -
    ROHM
    50 A
    650 V
    ±30V
    254 W
    1
    Single
    TO-247N
    Through Hole
    N
    3
    -
    Common Emitter
    -
    Infineon
    35 A
    1200 V
    ±20V
    210 W
    -
    -
    AG-ECONO2C-211
    -
    -
    -
    -
    -
    -
    onsemi
    25 A
    1200 V
    -
    100 W
    6
    3 Phase
    SPM27-SB
    Through Hole
    N
    27
    -
    -
    -
    Infineon
    60 A
    650 V
    ±20V
    176 W
    -
    -
    PG-TO247-3
    -
    -
    3
    -
    -
    -
    Infineon
    100 A
    650 V
    ±20V
    20 mW
    1
    Single
    AG-EASY3B
    -
    -
    -
    -
    -
    -
    ROHM
    50 A
    650 V
    ±30V
    206 W
    -
    -
    TO-263L
    Surface Mount
    -
    3
    -
    -
    -
    Infineon
    70 A
    1200 V
    ±20V
    330 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-4-STD-NT3.7
    Through Hole
    N
    4
    -
    -
    -
    ROHM
    40 A
    650 V
    ±30V
    144 W
    1
    -
    TO-247N
    Through Hole
    N
    3
    -
    Single
    16 x 5 x 21mm
    STMicroelectronics
    30 A
    420 V
    16V
    125 W
    -
    -
    DPAK (TO-252)
    Surface Mount
    N
    3
    1MHz
    Single
    6.6 x 6.2 x 2.4mm
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