Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1

RS-stocknr.:: 906-4407
Fabrikantnummer:: IPT007N06NATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1

Subtotaal (1 verpakking van 2 eenheden)*

€ 14,14

(excl. BTW)

€ 17,10

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 12 stuk(s) vanaf 10 augustus 2026
Plus verzending 3.104 stuk(s) vanaf 17 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 +	€ 7,07	€ 14,14

*prijsindicatie

RS-stocknr.:: 906-4407
Fabrikantnummer:: IPT007N06NATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	HSOF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	216nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	375W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.58mm
	Height	2.4mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type HSOF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 216nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 375W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.58mm
	Height 2.4mm
	Standards/Approvals No
	Automotive Standard No

Vrijgesteld

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT007N06NATMA1

This MOSFET is a high-current N-channel enhancement device designed for power switching in demanding electronic systems. It operates across a wide temperature range suitable for harsh environments and is supplied in a surface-mount HSOF package to support compact board layouts and efficient thermal management.

Features and Benefits:

• 60V drain rating enabling medium-voltage power designs
• 300A continuous current handling for heavy-load switching
• 1mΩ Rds(on) reducing conduction losses in high-current paths
• 375W power dissipation allowing sustained high-power operation
• 216nC typical gate charge for predictable gate-drive requirements
• ±20V gate tolerance supporting robust gate-drive transients

Applications

• Suitable for server and data centre power conversion stages
• Ideal for motor-drive inverter output stages
• Used for high-current synchronous rectification in PSUs
• Can be used for DC-DC converters in telecoms equipment
• Suitable for industrial power management and drives

What thermal limits should designers consider for continuous operation?

The device is rated to dissipate up to 375W

designers must ensure adequate PCB copper, thermal vias, or heatsinking to keep junction temperature within acceptable bounds given system power loss.

How does gate-charge impact drive circuitry selection?

With a typical gate charge of 216nC, gate drivers must supply sufficient peak current and switching speed to achieve desired transition times while managing switching losses and EMI.

What are the device’s mechanical mounting and pin-count details?

It is supplied in an HSOF surface-mount package with eight pins, enabling low-inductance board-level connections for high-current paths.

What operating temperature range can be expected in system design?

The component is specified to operate from -55°C up to 175°C, permitting use in thermally challenging environments when appropriate thermal design practices are applied.