Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1

RS-stocknr.:: 214-4347
Fabrikantnummer:: IAUT300N10S5N015ATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1

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RS-stocknr.:: 214-4347
Fabrikantnummer:: IAUT300N10S5N015ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 5
	Package Type	HSOF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Typical Gate Charge Qg @ Vgs	166nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 5
	Package Type HSOF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Typical Gate Charge Qg @ Vgs 166nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IAUT300N10S5N015ATMA1

Infineon OptiMOS 5 Series MOSFET, 100V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IAUT300N10S5N015ATMA1

This MOSFET is a high-power N‑channel enhancement device designed for demanding switching and power conversion roles. It operates across a broad temperature span suitable for harsh conditions and is packaged for surface mounting in an industry-standard HSOF footprint, offering low forward drop for efficient conduction in high-current circuits.

Features and Benefits:

• 100V drain capability enables higher-voltage switching
• 1.5mΩ low Rds(on) reduces conduction losses during high currents
• 300A continuous current supports heavy-load applications
• 375W power dissipation allows sustained thermal loading
• 166nC gate charge balances switching speed and drive requirements
• 1.3V forward voltage limits voltage drop under load

Applications

• Suitable for high-current power converters and inverters
• Ideal for traction and motor-drive stages in power electronics
• Used for high-performance DC-DC converters in industrial systems
• Can be used for solid-state power distribution modules
• Suitable for fast switching stages in server power supplies

What gate-drive strength is required for efficient switching?

Expect gate drivers capable of sourcing and sinking sufficient current to charge 166nC within your targeted switching interval

slower drive increases switching losses.

How does the device handle elevated junction temperatures?

It is rated to operate from -55°C up to 175°C, permitting use in high-temperature environments when appropriate thermal management is applied.

What mounting considerations are important for thermal performance?

Surface-mount HSOF requires a well-designed PCB thermal land and heat-sinking strategy to dissipate up to 375W of power under heavy duty.

How does channel configuration affect circuit design?

As an N‑channel enhancement device, it is suited to low-side switching or synchronous rectification arrangements where the gate reference is near the source potential.