Infineon OptiMOS P Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1
- RS-stocknr.:
- 892-2377
- Fabrikantnummer:
- BSS314PEH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 100 eenheden)*
€ 15,00
(excl. BTW)
€ 18,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- 3.900 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,15 | € 15,00 |
| 500 - 900 | € 0,143 | € 14,30 |
| 1000 - 2400 | € 0,137 | € 13,70 |
| 2500 - 4900 | € 0,131 | € 13,10 |
| 5000 + | € 0,083 | € 8,30 |
*prijsindicatie
- RS-stocknr.:
- 892-2377
- Fabrikantnummer:
- BSS314PEH6327XTSA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 0.1mm | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 0.1mm | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS314PEH6327XTSA1
Features and Benefits:
• 230mΩ Rds(on) delivers efficient conduction for small loads
• 1.5A continuous drain current supports moderate current paths
• 2.9nC typical gate charge reduces switching energy losses
• 20V maximum gate-source rating allows flexible gate drive margins
• Automotive AEC‑Q101 qualification suits vehicle‑grade applications
Applications
• Ideal for load switching in automotive control modules
• Used with power rails in handheld and portable electronics
• Can be used for small-signal power switching in sensor nodes
• Suitable for surface-mount designs where board space is limited
What thermal extremes can it tolerate during operation?
How does the package influence board-level integration?
What power-handling constraints should designers consider?
Which electrical limit governs gate drive selection?
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