Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

RS-stocknr.:: 823-5500
Artikelnummer Distrelec:: 304-44-428
Fabrikantnummer:: BSS308PEH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

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RS-stocknr.:: 823-5500
Artikelnummer Distrelec:: 304-44-428
Fabrikantnummer:: BSS308PEH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5nC
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-0.8V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Height	1mm
	Standards/Approvals	No
	Width	1.3mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5nC
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -0.8V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Height 1mm
	Standards/Approvals No
	Width 1.3mm
	Automotive Standard AEC-Q101

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 130mΩ Maximum Drain Source Resistance - BSS308PEH6327XTSA1

This MOSFET is a P-channel enhancement device designed for surface-mount switching and control in compact electronic assemblies. It operates across a wide temperature range suitable for demanding environments and is built to function where low-voltage, moderate-current switching is required. The device is supplied in a SOT-23 package and is compatible with automotive-grade applications.

Features and Benefits:

• Low on-resistance of 130 mΩ reduces conduction losses
• Rated for 30V drain-source withstand for low-voltage systems
• Continuous drain current of 1.6A supports moderate loads
• Typical gate charge of 5 nC enables faster gate switching
• Maximum gate-source voltage of 20V allows robust drive margins
• Power dissipation capacity of 500 mW aids thermal management

Applications

• Suitable for load disconnect in 12V automotive systems
• Ideal for battery protection and power-path control
• Used with DC-DC converter input-stage switching
• Can be used for signal-level power switching in modules
• Appropriate for compact surface-mount power boards

What thermal extremes can it tolerate in operation?

It is specified to operate down to -55 °C and up to 150 °C, allowing use in environments with wide thermal variation.

What package and mounting method does it use?

It is supplied in a SOT-23 package designed for surface mounting on PCB assemblies.

How does the device behave regarding gate-drive design?

With a maximum VGS rating of 20V and a typical gate charge of 5 nC, it requires modest drive capability and fast gate drivers to achieve rapid switching.

Is the device suitable for automotive qualification requirements?

It conforms to AEC‑Q101 standards, making it acceptable for many automotive electronic designs.