Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRRPBF

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Verpakkingsopties
RS-stocknr.:
831-2840
Fabrikantnummer:
IRF540NSTRRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

71nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

130W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF


This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.

Features & Benefits


• Low RDS(on) minimises power losses during operation

• Continuous drain current capability of 33A supports various applications

• Wide gate-source voltage range provides design flexibility

• Withstands high temperatures up to 175°C

• Fast switching improves overall circuit efficiency

• D2PAK surface mount design facilitates PCB integration

Applications


• Used in power management circuits for automation

• Commonly implemented in DC-DC converters for energy efficiency

• Suitable for motor drive that require high current

• Found in power supply modules for industrial electronics

• Appropriate for automotive due to robust thermal performance

What is the significance of low RDS(on) in operation?


Low RDS(on) reduces heat generation and enhances energy efficiency, which is Crucial for extending component life and lowering operating expenses.

How does the MOSFET perform at higher temperatures?


It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.

Can this device handle pulsed currents, and what are the specifications?


It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it Ideal for applications with fluctuating load conditions.

What are the implications of the specified gate threshold voltage?


The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.

How does the D2PAK package affect its usability?


The D2PAK package design promotes efficient heat dissipation and simplifies surface mount assembly, making it suitable for high-power applications on Compact PCBs.

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