Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF

RS-stocknr.:: 827-4114
Fabrikantnummer:: IRFS4615TRLPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 12,78

(excl. BTW)

€ 15,465

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 200 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 2,556	€ 12,78
50 - 120	€ 2,296	€ 11,48
125 - 245	€ 2,146	€ 10,73
250 - 495	€ 2,02	€ 10,10
500 +	€ 1,862	€ 9,31

*prijsindicatie

RS-stocknr.:: 827-4114
Fabrikantnummer:: IRFS4615TRLPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	26nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	144W
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	4.83mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 26nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 144W
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 4.83mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 150V Maximum Drain Source Voltage, 33A Maximum Continuous Drain Current - IRFS4615TRLPBF

This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for power switching in surface-mounted assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments while providing controlled gate-driven switching for medium- to high-current applications.

Features and Benefits:

• 150V drain-source withstand enables high-voltage switching capability
• 33A continuous drain current supports substantial load currents
• 42 mΩ RDS(on) minimises conduction losses under heavy load
• 26 nC typical gate charge allows predictable drive requirements
• 144W maximum power dissipation handles elevated power levels
• 20V gate-source limit protects against excessive gate stress

Applications

• Suitable for DC-DC converters in industrial power supplies
• Ideal for motor-drive stages requiring high current
• Used with battery-management systems needing high-voltage switching
• Can be used for synchronous rectification in power conversion
• Suitable for high-temperature power modules in harsh environments

What thermal limits govern long-term operation?

The device is specified to function from -55 °C up to 175 °C, enabling use in high-temperature systems where elevated junction temperatures are expected.

What package and mounting style does it require?

It is supplied in a TO-263 package intended for surface-mount assembly on appropriate copper-area land patterns for heat dissipation.

How does the gate charge affect driver selection?

With a typical total gate charge of 26 nC, designers should select drivers capable of delivering the required charge within the target switching timeframe to limit transition losses.

What voltage constraints apply to the gate and drain?

The maximum permissible gate-to-source voltage is 20V while the drain-to-source voltage rating is 150V, defining safe operating boundaries for gate drive and load transients.