Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 165-8288
- Fabrikantnummer:
- IRFS4115TRLPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 800 eenheden)*
€ 1.529,60
(excl. BTW)
€ 1.851,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 1,912 | € 1.529,60 |
*prijsindicatie
- RS-stocknr.:
- 165-8288
- Fabrikantnummer:
- IRFS4115TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 11.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 11.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263 IRFS4115TRL7PP
- Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263 AUIRFS4115-7TRL