Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1

RS-stocknr.:: 826-9204
Fabrikantnummer:: IPB600N25N3GATMA1
Fabrikant:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1

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Aantal stuks	Per stuk	Per verpakking*
10 - 10	€ 2,54	€ 25,40
20 - 40	€ 2,412	€ 24,12
50 - 90	€ 2,311	€ 23,11
100 - 240	€ 2,21	€ 22,10
250 +	€ 2,058	€ 20,58

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RS-stocknr.:: 826-9204
Fabrikantnummer:: IPB600N25N3GATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Series	OptiMOS 3
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.31mm
	Height	4.57mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Series OptiMOS 3
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.31mm
	Height 4.57mm
	Automotive Standard No

Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - IPB600N25N3GATMA1

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching tasks in demanding electronic systems. It operates across a very wide temperature span and is configured for surface-mount implementation, offering a compact footprint for thermal management in assemblies where robust power handling and gate control are required.

Features and Benefits:

• 250V drain-to-source rating enables high-voltage switching capability
• 60mΩ on-resistance reduces conduction losses and improves efficiency
• 25A continuous drain current supports sustained high-load operation
• 136W power dissipation permits significant heat handling in circuits
• 22nC gate charge affords predictable switching energy and drive design
• 20V gate-source limit allows standard gate-drive voltage margins

Applications

• Suitable for high-voltage SMPS primary switching stages
• Ideal for industrial motor-drive inverter legs
• Used for DC-DC converters in telecoms power systems
• Can be used for battery management and charger topology
• Employed in general-purpose power switching on surface-mounted boards

What thermal range can it tolerate during operation?

It is rated to function from -55°C up to 175°C, allowing use in environments with extreme temperature variation.

Which package type facilitates assembly and heat transfer?

It comes in a TO-263 surface-mount package that eases solder mounting and offers a large thermal pad for resistor heat spreading.

How does the device behave for gate-drive design?

The typical gate charge of 22nC provides a quantifiable switching energy to size gate drivers and estimate switching losses.

What conduction performance should designers expect under load?

With a maximum specified drain-source resistance of 60mΩ, designers can calculate conduction losses for current paths up to the rated continuous 25A.