N-Channel MOSFET Transistor, 100 A, 150 V, 3-Pin D2PAK Infineon IPB072N15N3GATMA1
- RS-stocknr.:
- 911-4864
- Fabrikantnummer:
- IPB072N15N3GATMA1
- Fabrikant:
- Infineon
Prijs Per stuk (op een rol 1000)
€ 2,958
(excl. BTW)
€ 3,579
(incl. BTW)
4000 op voorraad - levertijd is 1 werkdag(en).
Aantal stuks | Per stuk | Per reel* |
|---|---|---|
| 1000 + | € 2,958 | € 2.958,00 |
*prijsindicatie
- RS-stocknr.:
- 911-4864
- Fabrikantnummer:
- IPB072N15N3GATMA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
- Land van herkomst:
- DE
Productomschrijving
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 150 V |
| Series | OptiMOS™ 3 |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 9.45mm |
| Length | 10.31mm |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |