Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 124-8755
Fabrikantnummer:: IPB600N25N3GATMA1
Fabrikant:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263

Subtotaal (1 rol van 1000 eenheden)*

€ 1.372,00

(excl. BTW)

€ 1.660,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 18 december 2026

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Aantal stuks	Per stuk	Per rol*
1000 +	€ 1,372	€ 1.372,00

*prijsindicatie

RS-stocknr.:: 124-8755
Fabrikantnummer:: IPB600N25N3GATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-263
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	4.57mm
	Length	10.31mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-263
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 4.57mm
	Length 10.31mm
	Automotive Standard No

Land van herkomst:: CN

Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - IPB600N25N3GATMA1

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching tasks in demanding electronic systems. It operates across a very wide temperature span and is configured for surface-mount implementation, offering a compact footprint for thermal management in assemblies where robust power handling and gate control are required.

Features and Benefits:

• 250V drain-to-source rating enables high-voltage switching capability
• 60mΩ on-resistance reduces conduction losses and improves efficiency
• 25A continuous drain current supports sustained high-load operation
• 136W power dissipation permits significant heat handling in circuits
• 22nC gate charge affords predictable switching energy and drive design
• 20V gate-source limit allows standard gate-drive voltage margins

Applications

• Suitable for high-voltage SMPS primary switching stages
• Ideal for industrial motor-drive inverter legs
• Used for DC-DC converters in telecoms power systems
• Can be used for battery management and charger topology
• Employed in general-purpose power switching on surface-mounted boards

What thermal range can it tolerate during operation?

It is rated to function from -55°C up to 175°C, allowing use in environments with extreme temperature variation.

Which package type facilitates assembly and heat transfer?

It comes in a TO-263 surface-mount package that eases solder mounting and offers a large thermal pad for resistor heat spreading.

How does the device behave for gate-drive design?

The typical gate charge of 22nC provides a quantifiable switching energy to size gate drivers and estimate switching losses.

What conduction performance should designers expect under load?

With a maximum specified drain-source resistance of 60mΩ, designers can calculate conduction losses for current paths up to the rated continuous 25A.