Vishay SiHF840S Type N-Channel MOSFET, 8.1 A, 500 V Enhancement, 3-Pin TO-263 SIHF840STRL-GE3
- RS-stocknr.:
- 815-2657
- Fabrikantnummer:
- SIHF840STRL-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 24,13
(excl. BTW)
€ 29,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 2,413 | € 24,13 |
| 50 - 90 | € 2,268 | € 22,68 |
| 100 - 240 | € 2,051 | € 20,51 |
| 250 - 490 | € 1,93 | € 19,30 |
| 500 + | € 1,81 | € 18,10 |
*prijsindicatie
- RS-stocknr.:
- 815-2657
- Fabrikantnummer:
- SIHF840STRL-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | SiHF840S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series SiHF840S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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