Name: Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3
Brand: Vishay
SKU: 903-4504
Price: 7.45 EUR
Availability: OutOfStock

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	123mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	250W
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 123mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 250W
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

Land van herkomst:: CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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