Vishay SiS892ADN N-Channel Power MOSFET, 28 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3
- RS-stocknr.:
- 787-9399
- Fabrikantnummer:
- SIS892ADN-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 10 eenheden)*
€ 3,30
(excl. BTW)
€ 4,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 2.170 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,33 | € 3,30 |
*prijsindicatie
- RS-stocknr.:
- 787-9399
- Fabrikantnummer:
- SIS892ADN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SiS892ADN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4mm | |
| Standards/Approvals | RoHS | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 | ||
Series SiS892ADN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.4mm | ||
Standards/Approvals RoHS | ||
Length 3.4mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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