Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- RS-stocknr.:
- 180-7759
- Fabrikantnummer:
- SI7415DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 14,71
(excl. BTW)
€ 17,80
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,471 | € 14,71 |
| 100 - 240 | € 1,324 | € 13,24 |
| 250 - 490 | € 1,177 | € 11,77 |
| 500 - 990 | € 1,074 | € 10,74 |
| 1000 + | € 0,926 | € 9,26 |
*prijsindicatie
- RS-stocknr.:
- 180-7759
- Fabrikantnummer:
- SI7415DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.61mm | |
| Width | 3.61 mm | |
| Height | 1.12mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.61mm | ||
Width 3.61 mm | ||
Height 1.12mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.8W and continuous drain current of 5.7A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fast switching
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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