Infineon SIPMOS Type N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1

RS-stocknr.:: 752-8249P
Fabrikantnummer:: BSS87H6327FTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1

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RS-stocknr.:: 752-8249P
Fabrikantnummer:: BSS87H6327FTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	260mA
	Maximum Drain Source Voltage Vds	240V
	Series	SIPMOS
	Package Type	SOT-89
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	2.5mm
	Length	4.5mm
	Height	1.5mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 260mA
	Maximum Drain Source Voltage Vds 240V
	Series SIPMOS
	Package Type SOT-89
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 2.5mm
	Length 4.5mm
	Height 1.5mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 1W Maximum Power Dissipation - BSS87H6327FTSA1

This MOSFET is a surface-mount switching device designed for low-current, high-voltage applications in automotive and industrial environments. It operates as an enhancement-mode N-channel transistor and is intended for compact board-level implementations where thermal endurance and voltage handling are required.

Features and Benefits:

• 240V drain capability enabling high-voltage switching applications
• 7.5 Ω maximum Rds(on) reducing conduction losses at low currents
• 1W maximum power dissipation for modest thermal loads
• 260 mA continuous drain current supporting small-signal switching
• Vgs rating of 20V permitting wide gate-drive tolerance
• Gate charge 3.7 nC allowing predictable switching energy management

Applications

• Suitable for auxiliary automotive control circuits
• Ideal for battery-management sensing and switching
• Used with driver ICs in power-limited converters
• Can be used for industrial signal-level high-voltage switching
• Used for compact surface-mount prototypes and small assemblies

What temperature range can it reliably endure in operation?

It is specified to function between -55 °C and 150 °C, allowing use across harsh ambient and elevated under‑bonnet conditions.

How many pins and what mounting format does it require on the PCB?

The device has three electrical leads and is supplied in an SOT-89 package for surface mounting.

How does the package size affect board-space planning?

Its compact 4.5 x 2.5 x 1.5mm envelope minimises footprint and supports dense layouts without external heatsinking for low-power designs.

Is the device suited to automotive qualification criteria?

It meets automotive-grade AEC‑Q101 standards, aligning with component selection for vehicle electronic subsystems.