Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8
- RS-stocknr.:
- 273-5250
- Fabrikantnummer:
- BSZ12DN20NS3GATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,48
(excl. BTW)
€ 6,63
(incl. BTW)
Voeg 85 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- 5 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,096 | € 5,48 |
| 50 - 495 | € 0,914 | € 4,57 |
| 500 - 995 | € 0,782 | € 3,91 |
| 1000 - 2495 | € 0,768 | € 3,84 |
| 2500 + | € 0,754 | € 3,77 |
*prijsindicatie
- RS-stocknr.:
- 273-5250
- Fabrikantnummer:
- BSZ12DN20NS3GATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TSDSON-8 | |
| Series | BSZ12DN20NS3 G | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC1 | |
| Length | 40mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TSDSON-8 | ||
Series BSZ12DN20NS3 G | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 40 mm | ||
Standards/Approvals IEC61249-2-21, JEDEC1 | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Gerelateerde Links
- Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1
- Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- Infineon ISZ Type N-Channel MOSFET, 63 A, 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon OptiMOS Type N-Channel MOSFET, 142 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon OptiMOS Type N-Channel MOSFET, 142 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0901NSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0902NSATMA1