Infineon ISZ Type N-Channel MOSFET, 63 A, 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- RS-stocknr.:
- 349-154
- Fabrikantnummer:
- ISZ113N10NM5LF2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,33
(excl. BTW)
€ 12,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,066 | € 10,33 |
| 50 - 95 | € 1,964 | € 9,82 |
| 100 - 495 | € 1,818 | € 9,09 |
| 500 - 995 | € 1,672 | € 8,36 |
| 1000 + | € 1,61 | € 8,05 |
*prijsindicatie
- RS-stocknr.:
- 349-154
- Fabrikantnummer:
- ISZ113N10NM5LF2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TSDSON-8 | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TSDSON-8 | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 3.3x3.3 package, it is targeted for soft start and current limiting purpose in Power over Ethernet (PoE) application.
Wide safe operating area
Low RDS(on)
High max. pulse current
High max. continuous current
Available in small low profile package
Gerelateerde Links
- Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- Infineon ISZ Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ019N03L5SATMA1
- Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1
- Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1