Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 9,35

(excl. BTW)

€ 11,30

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 21 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
5 - 45€ 1,87€ 9,35
50 - 95€ 1,778€ 8,89
100 - 495€ 1,646€ 8,23
500 - 995€ 1,516€ 7,58
1000 +€ 1,458€ 7,29

*prijsindicatie

RS-stocknr.:
349-157
Fabrikantnummer:
ISZ520N20NM6ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

200V

Series

ISZ

Package Type

PG-TSDSON-8FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

9.9nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

Land van herkomst:
MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.

Low conduction losses

Low switching losses

Stable operation with improved EMI

Less paralleling required

Better current sharing when paralleling

Environmentally friendly

Gerelateerde Links