Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS-stocknr.:
- 273-3044
- Fabrikantnummer:
- ISZ040N03L5ISATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 11,225
(excl. BTW)
€ 13,575
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,449 | € 11,23 |
| 50 - 475 | € 0,414 | € 10,35 |
| 500 - 975 | € 0,385 | € 9,63 |
| 1000 - 2475 | € 0,378 | € 9,45 |
| 2500 + | € 0,37 | € 9,25 |
*prijsindicatie
- RS-stocknr.:
- 273-3044
- Fabrikantnummer:
- ISZ040N03L5ISATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | OptiMOSTM Power-MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 37W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249‑2‑21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type OptiMOSTM Power-MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 37W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249‑2‑21 | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
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