Infineon OptiMOS Type N-Channel MOSFET, 142 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS-stocknr.:
- 273-5246
- Fabrikantnummer:
- BSZ0901NSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,71
(excl. BTW)
€ 6,91
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Plus verzending 95 stuk(s) vanaf 08 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,142 | € 5,71 |
| 50 - 495 | € 0,954 | € 4,77 |
| 500 - 995 | € 0,816 | € 4,08 |
| 1000 - 2495 | € 0,804 | € 4,02 |
| 2500 + | € 0,788 | € 3,94 |
*prijsindicatie
- RS-stocknr.:
- 273-5246
- Fabrikantnummer:
- BSZ0901NSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an integrated monolithic schottky like diode. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. Optimized SyncFET for high performance buck converter.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
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