Infineon ISC Type N-Channel OptiMOST Power-MOSFET, 63 A, 30 V Enhancement, 8-Pin PG-TDSON-8
- RS-stocknr.:
- 273-3040
- Fabrikantnummer:
- ISC045N03L5SATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 11,10
(excl. BTW)
€ 13,425
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 4.950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,444 | € 11,10 |
| 50 - 475 | € 0,41 | € 10,25 |
| 500 - 975 | € 0,381 | € 9,53 |
| 1000 - 2475 | € 0,372 | € 9,30 |
| 2500 + | € 0,364 | € 9,10 |
*prijsindicatie
- RS-stocknr.:
- 273-3040
- Fabrikantnummer:
- ISC045N03L5SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | OptiMOST Power-MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.89V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type OptiMOST Power-MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.89V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFET is offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
Easy to design in
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