Infineon ISC Type N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- RS-stocknr.:
- 349-141
- Fabrikantnummer:
- ISC035N10NM5LF2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,88
(excl. BTW)
€ 9,54
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 5.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,94 | € 7,88 |
| 20 - 198 | € 3,55 | € 7,10 |
| 200 - 998 | € 3,27 | € 6,54 |
| 1000 - 1998 | € 3,035 | € 6,07 |
| 2000 + | € 2,72 | € 5,44 |
*prijsindicatie
- RS-stocknr.:
- 349-141
- Fabrikantnummer:
- ISC035N10NM5LF2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 217W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 217W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
- Land van herkomst:
- CN
The Infineon OptiMOS 5 Linear FET 2, 100 V is an N-channel, normal level MOSFET specifically designed for hot-swap, battery protection, and e-fuse applications. It features very low on resistance (RDS(on)), which helps minimize conduction losses, enhancing efficiency. The MOSFET also offers a wide safe operating area (SOA), ensuring reliable performance under a variety of operating conditions. These features make it an ideal choice for applications requiring robust, efficient, and reliable power management.
100% avalanche tested
Pb‑free lead plating and RoHS compliant
Halogen‑free according to IEC61249‑2‑21
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