Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1

RS-stocknr.:: 349-149
Fabrikantnummer:: ISC151N20NM6ATMA1
Fabrikant:: Infineon

Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1

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€ 14,50

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2 - 18	€ 5,99	€ 11,98
20 - 198	€ 5,39	€ 10,78
200 - 998	€ 4,97	€ 9,94
1000 - 1998	€ 4,615	€ 9,23
2000 +	€ 4,135	€ 8,27

*prijsindicatie

RS-stocknr.:: 349-149
Fabrikantnummer:: ISC151N20NM6ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-TDSON-8 FL
	Series	ISC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	15.1mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	200W
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, JEDEC, J-STD-020, RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-TDSON-8 FL
	Series ISC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 15.1mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 200W
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS
	Automotive Standard No

Datasheet - ISC151N20NM6ATMA1

Land van herkomst:: MY

Infineon ISC Series Power Transistor, 200W Maximum Power Dissipation, 200V Maximum Drain Source Voltage - ISC151N20NM6ATMA1

This power transistor is a high-current N-channel enhancement MOSFET designed for surface-mount applications where robust switching and thermal performance are required. It operates across a wide temperature range and is intended for power conversion and control tasks in demanding electronic systems, offering low forward voltage and a compact PG-TDSON-8 FL package for space-constrained assemblies.

Features and Benefits:

• 200V rating enables high-voltage switching capability
• 74A continuous current for heavy-load handling
• 15.1mΩ Rds(on) reduces conduction losses at high current
• 200W power dissipation supports elevated thermal load
• 31nC gate charge for fast driven switching control
• -55°C to175°C range suits extreme-temperature operation

Applications

• Suitable for synchronous buck converter power stage
• Ideal for motor drive inverter leg switching
• Used with high-current power distribution modules
• Can be used for server power-supply transistors
• Suitable for industrial switching regulator designs

What mounting method does it require for assembly?

It is supplied in a surface-mount PG-TDSON-8 FL package that is intended for reflow soldering to PCB landings.

What voltage stress can the device withstand in switching environments?

The device is specified to handle a maximum drain-source voltage of 200V during operation.

How does gate drive requirement affect controller selection?

The maximum gate-source tolerance is 20V and the typical gate charge at Vgs is 31nC, which determines driver current and timing needs.

What thermal considerations are recommended for high-power use?

With a maximum power dissipation of 200W, adequate PCB thermal alleviation and heat-spreading measures are necessary to manage junction temperature.