Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- RS-stocknr.:
- 349-139
- Fabrikantnummer:
- ISC032N12LM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 8,72
(excl. BTW)
€ 10,56
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,36 | € 8,72 |
| 20 - 198 | € 3,93 | € 7,86 |
| 200 - 998 | € 3,62 | € 7,24 |
| 1000 - 1998 | € 3,365 | € 6,73 |
| 2000 + | € 3,01 | € 6,02 |
*prijsindicatie
- RS-stocknr.:
- 349-139
- Fabrikantnummer:
- ISC032N12LM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 211W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 211W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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