Infineon OptiMOSa5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin PG-TO262-3 IPI076N15N5AKSA1
- RS-stocknr.:
- 273-3013
- Fabrikantnummer:
- IPI076N15N5AKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 50 eenheden)*
€ 144,55
(excl. BTW)
€ 174,90
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 450 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 2,891 | € 144,55 |
*prijsindicatie
- RS-stocknr.:
- 273-3013
- Fabrikantnummer:
- IPI076N15N5AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TO262-3 | |
| Series | OptiMOSa5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDECforIndustrialApplications, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TO262-3 | ||
Series OptiMOSa5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDECforIndustrialApplications, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFETs are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications.
Higher power density designs
More rugged products
System cost reduction
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