Infineon OptiMOS Type N-Channel MOSFET, 73 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1
- RS-stocknr.:
- 349-430
- Fabrikantnummer:
- IPD040N03LF2SATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,37
(excl. BTW)
€ 8,92
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.980 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,737 | € 7,37 |
| 100 - 240 | € 0,701 | € 7,01 |
| 250 - 490 | € 0,649 | € 6,49 |
| 500 - 990 | € 0,596 | € 5,96 |
| 1000 + | € 0,575 | € 5,75 |
*prijsindicatie
- RS-stocknr.:
- 349-430
- Fabrikantnummer:
- IPD040N03LF2SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 4 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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