Infineon OptiMOS Type P-Channel MOSFET, 4.3 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS-stocknr.:
- 273-3008
- Fabrikantnummer:
- IPD40DP06NMATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,53
(excl. BTW)
€ 9,11
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Verzending 2.420 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,753 | € 7,53 |
| 50 - 90 | € 0,637 | € 6,37 |
| 100 - 240 | € 0,592 | € 5,92 |
| 250 - 990 | € 0,578 | € 5,78 |
| 1000 + | € 0,566 | € 5,66 |
*prijsindicatie
- RS-stocknr.:
- 273-3008
- Fabrikantnummer:
- IPD40DP06NMATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suit
Easy interface to MCU
Improved efficiency at low loads due to low Qg
Fast switching
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