Infineon OptiMOS 5 Type N-Channel MOSFET, 87 A, 60 V Enhancement, 3-Pin PG-TO-220 FullPAK
- RS-stocknr.:
- 273-2996
- Fabrikantnummer:
- IPA029N06NM5SXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,42
(excl. BTW)
€ 5,34
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 480 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,21 | € 4,42 |
| 10 - 18 | € 2,005 | € 4,01 |
| 20 - 24 | € 1,965 | € 3,93 |
| 26 - 48 | € 1,845 | € 3,69 |
| 50 + | € 1,695 | € 3,39 |
*prijsindicatie
- RS-stocknr.:
- 273-2996
- Fabrikantnummer:
- IPA029N06NM5SXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | PG-TO-220 FullPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type PG-TO-220 FullPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET in TO-220 fullPAK package features increased power density, improved efficiency with low RDS and lower system costs. The TO-220 FullPAK package portfolio of power MOSFETs presents a perfect solution for synchronous rectification.
Less paralleling required
Low voltage overshoot
Less heat generation
Gerelateerde Links
- Infineon OptiMOS 5 Type N-Channel MOSFET, 87 A, 60 V Enhancement, 3-Pin PG-TO-220 FullPAK IPA029N06NM5SXKSA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET, 87 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET, 15 A, 250 V Enhancement, 3-Pin PG-TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET, 15 A, 250 V Enhancement, 3-Pin PG-TO-220 IPA600N25NM3SXKSA1
- Infineon OptiMOS 7 Type N-Channel MOSFET, 220 A, 100 V Enhancement, 8-Pin PG-TDSON-8-53 IAUCN10S7N021ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220 IPA057N06N3GXKSA1
- Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3
