Infineon OptiMOS Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO263-3
- RS-stocknr.:
- 273-2780
- Fabrikantnummer:
- IPB65R115CFD7AATMA1
- Fabrikant:
- Infineon
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€ 3,80
(excl. BTW)
€ 4,60
(incl. BTW)
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- Plus verzending 100 stuk(s) vanaf 07 januari 2026
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|---|---|
| 1 - 49 | € 3,80 |
| 50 - 99 | € 3,46 |
| 100 - 249 | € 3,16 |
| 250 - 499 | € 2,91 |
| 500 + | € 2,72 |
*prijsindicatie
- RS-stocknr.:
- 273-2780
- Fabrikantnummer:
- IPB65R115CFD7AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.
Lower switching losses
High quality and reliability
100 percent avalanche tested
Optimized for higher battery voltages
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