Infineon OptiMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R099CFD7AATMA1
- RS-stocknr.:
- 273-2777
- Fabrikantnummer:
- IPB65R099CFD7AATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 23.297,00
(excl. BTW)
€ 28.189,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 23,297 | € 23.297,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2777
- Fabrikantnummer:
- IPB65R099CFD7AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.
Lower switching losses
High quality and reliability
100 percent avalanche tested
Optimized for higher battery voltages
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