Infineon OptiMOS 5 Type N-Channel Power MOSFET, 87 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- RS-stocknr.:
- 349-395
- Fabrikantnummer:
- BSC088N15LS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 14,32
(excl. BTW)
€ 17,325
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,864 | € 14,32 |
| 50 - 95 | € 2,72 | € 13,60 |
| 100 + | € 2,52 | € 12,60 |
*prijsindicatie
- RS-stocknr.:
- 349-395
- Fabrikantnummer:
- BSC088N15LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 139W | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 139W | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon OptiMOS 5 power MOSFET logic level 150 V family offers the same excellent performance of the OptiMOS 5 150 V products with the capability of operating with just 4.5 V of Vgs. Its features an improved thermal management and less system complexity.
Very low switching losses
Tailored to SR that provide 5 V
Highly efficient designs
Gerelateerde Links
- Infineon OptiMOS 5 Type N-Channel Power MOSFET, 76 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET, 55 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -22 A, 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- Infineon OptiMOS 7 Type N-Channel MOSFET, 220 A, 100 V Enhancement, 8-Pin PG-TDSON-8-53 IAUCN10S7N021ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N012ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 139 A, 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7N020ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 82 A, 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7N040DATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 62 A, 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7N056DATMA1
