Vishay SQS Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- RS-stocknr.:
- 268-8373
- Fabrikantnummer:
- SQS460CENW-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,85
(excl. BTW)
€ 8,29
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 2.840 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,685 | € 6,85 |
| 50 - 90 | € 0,672 | € 6,72 |
| 100 - 240 | € 0,534 | € 5,34 |
| 250 - 990 | € 0,523 | € 5,23 |
| 1000 + | € 0,348 | € 3,48 |
*prijsindicatie
- RS-stocknr.:
- 268-8373
- Fabrikantnummer:
- SQS460CENW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8W | |
| Series | SQS | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.059Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.845V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 27W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8W | ||
Series SQS | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.059Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.845V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 27W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive dual N channel TrenchFET power MOSFET is lead Pb and halogen free device. That is single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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