Vishay SQSA70CENW Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA70CENW-T1_GE3

RS-stocknr.:: 228-2972
Fabrikantnummer:: SQSA70CENW-T1_GE3
Fabrikant:: Vishay

Vishay SQSA70CENW Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA70CENW-T1_GE3

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€ 9,89

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€ 11,97

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Plus verzending 2.990 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,989	€ 9,89
100 - 240	€ 0,938	€ 9,38
250 - 490	€ 0,743	€ 7,43
500 - 990	€ 0,692	€ 6,92
1000 +	€ 0,594	€ 5,94

*prijsindicatie

RS-stocknr.:: 228-2972
Fabrikantnummer:: SQSA70CENW-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK 1212-8W
	Series	SQSA70CENW
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	68.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	0.85V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Operating Temperature	175°C
	Height	3.3mm
	Standards/Approvals	RoHS
	Length	3.3mm
	Width	3.3mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK 1212-8W
	Series SQSA70CENW
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 68.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 0.85V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Operating Temperature 175°C
	Height 3.3mm
	Standards/Approvals RoHS
	Length 3.3mm
	Width 3.3mm
	Automotive Standard AEC-Q101

Datasheet - SQSA70CENW-T1_GE3

Vishay SQSA70CENW Series MOSFET, 150V Drain Source Voltage, 18A Continuous Drain Current - SQSA70CENW-T1_GE3

This MOSFET is a power-switching transistor designed for high-voltage, high-current applications in PCB-mounted systems. It operates as an N-channel enhancement device suitable for switching and power-management roles across a broad temperature span, and is presented in a compact SMD package for tight board layouts.

Features and Benefits:

• 150V drain capability enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 68.5 mΩ RDS(on) minimises conduction losses
• 8 nC typical gate charge allows fast switching transitions
• 62.5W maximum power dissipation handles thermal stress
• 20V gate-source tolerance permits wide drive margins

Applications

• Suitable for automotive power-conversion modules
• Ideal for DC-DC converters in industrial equipment
• Used with motor drivers requiring high current handling
• Can be used for synchronous rectification in power supplies
• Suitable for battery management and charging circuits

What temperature range can it reliably operate in?

It functions across a wide band from -55 °C up to 175 °C, making it appropriate for elevated-temperature environments.

What package type and mounting method does it use?

The device comes in a PowerPAK 1212-8W SMD package designed for PCB mounting to aid compact assembly.

How does the gate charge affect switching performance?

A typical gate charge of 8 nC reduces gate-drive energy and contributes to quicker turn-on and turn-off in switching topologies.

Is it suitable for automotive-grade deployments?

It meets AEC-Q101 requirements for use in automotive electronic systems where component qualification is necessary.