Vishay SQS N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- RS-stocknr.:
- 268-8370
- Fabrikantnummer:
- SQS140ELNW-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 9,55
(excl. BTW)
€ 11,56
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 5.930 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,955 | € 9,55 |
| 50 - 90 | € 0,935 | € 9,35 |
| 100 - 240 | € 0,745 | € 7,45 |
| 250 + | € 0,731 | € 7,31 |
*prijsindicatie
- RS-stocknr.:
- 268-8370
- Fabrikantnummer:
- SQS140ELNW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQS | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 197W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQS | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 197W | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature. It has wettable flank terminals.
Low thermal resistance
AEC Q101 qualified
ROHS compliant
Gerelateerde Links
- Vishay SQS N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay SQS N-Channel MOSFET, 192 A, 30 V Enhancement, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3
- Vishay SQS Type P-Channel MOSFET, 44 A, 80 V Enhancement, 8-Pin 1212-8SLW SQS181ELNW-T1_GE3
- Vishay N-Channel MOSFET, 214 A, 40 V Depletion, 8-Pin PowerPAK 1212-8SLW SQS140ENW-T1_GE3
- Vishay N-Channel MOSFET, 101 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- Vishay N-Channel MOSFET, 110 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3
- Vishay N-Channel MOSFET, 141 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS160ELNW-T1_GE3
- Vishay SQS N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3