Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- RS-stocknr.:
- 268-8291
- Fabrikantnummer:
- SIHB085N60EF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 229,55
(excl. BTW)
€ 277,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 1.000 stuk(s) vanaf 07 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 4,591 | € 229,55 |
| 100 - 450 | € 3,755 | € 187,75 |
| 500 - 950 | € 3,195 | € 159,75 |
| 1000 + | € 2,874 | € 143,70 |
*prijsindicatie
- RS-stocknr.:
- 268-8291
- Fabrikantnummer:
- SIHB085N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio
Low effective capacitance
Avalanche energy rated
Low figure of merit
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