Vishay E Type N-Channel Power MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3

RS-stocknr.:: 279-9903
Fabrikantnummer:: SIHB150N60E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 122,60

(excl. BTW)

€ 148,35

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 950 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 2,452	€ 122,60
100 +	€ 2,18	€ 109,00

*prijsindicatie

RS-stocknr.:: 279-9903
Fabrikantnummer:: SIHB150N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.137Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.137Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB150N60E-GE3

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 22A Continuous Drain Current - SIHB150N60E-GE3

This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in demanding industrial environments. It operates across a wide ambient range and is supplied in a surface-mount TO-263 package for applications where board-mounted power handling and thermal management are required.

Features and Benefits:

• 600V drain rating enabling high-voltage switching
• 22A continuous drain current for sustained load handling
• 0.137Ω low Rds(on) reducing conduction losses
• 179W power dissipation for elevated thermal performance
• 36nC typical gate charge for predictable switching control
• 30V gate limit allowing robust gate-drive margins

Applications

• Suitable for industrial motor drive inverters
• Ideal for offline switch-mode power supplies
• Used with high-voltage DC-DC converters
• Can be used for power factor correction stages
• Suitable for hard-switching topologies in power electronics

What package considerations affect PCB thermal design?

The TO-263 surface-mount format requires a substantial copper area and thermal vias beneath the package to extract heat and exploit the 179W dissipation capability while maintaining junction temperatures.

How does gate-drive choice impact switching performance?

With a typical gate charge of 36nC and a maximum Vgs of 30V, driver current and slew-rate control directly influence switching losses and electromagnetic emissions during transitions.

What environmental extremes can the device tolerate?

It is specified to function from -55°C up to 150°C, allowing use in installations exposed to wide temperature fluctuations without derating for basic operation.

Are there constraints on polarity or channel operation?

The device is an enhancement-mode N-channel MOSFET, therefore it requires a positive gate-source voltage relative to the source to turn on and must be used accordingly in circuit topology.