Infineon IPT N-Channel MOSFET, 365 A, 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1

RS-stocknr.:: 259-2730
Fabrikantnummer:: IPTC014N10NM5ATMA1
Fabrikant:: Infineon

Infineon IPT N-Channel MOSFET, 365 A, 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1

Subtotaal (1 rol van 1800 eenheden)*

€ 4.190,40

(excl. BTW)

€ 5.070,60

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending 1.800 stuk(s) vanaf 07 oktober 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1800 +	€ 2,328	€ 4.190,40

*prijsindicatie

RS-stocknr.:: 259-2730
Fabrikantnummer:: IPTC014N10NM5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	365A
	Maximum Drain Source Voltage Vds	100V
	Series	IPT
	Package Type	HDSOP
	Mount Type	Surface Mount
	Pin Count	16
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	880mV
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	168nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 365A
	Maximum Drain Source Voltage Vds 100V
	Series IPT
	Package Type HDSOP
	Mount Type Surface Mount
	Pin Count 16
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 880mV
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 168nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPTC014N10NM5ATMA1

Infineon IPT Series MOSFET, 100V Maximum Drain-Source Voltage, 365A Maximum Continuous Drain Current - IPTC014N10NM5ATMA1

This MOSFET is an enhancement-mode N-channel transistor designed for high-current switching in demanding electronic systems. It operates across a wide ambient range and is packaged for low-profile board mounting, offering substantial power handling for applications requiring robust conduction and thermal endurance.

Features and Benefits:

• Low conduction resistance reduces on-state losses for efficient power transfer
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments

Applications

• Suitable for high-current motor drive stages
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies

What gate voltage tolerance should be observed during operation?

The gate must not exceed a Peak of 20V relative to the source to avoid damage.

How does the device handle thermal stress during continuous operation?

It can dissipate up to 375W provided appropriate board thermal management and cooling are applied.

What resistance performance can be expected for conduction losses?

The on-resistance is specified at 1.4mΩ, which defines low conduction losses under rated conditions.

What temperature extremes can it withstand during storage or use?

It is rated to operate from -55°C up to 175°C, permitting use across a very wide thermal range.